Low Voltage Electron Holography - High Voltage Electron Holography

Multiple scattering in low-energy electron holography

The theory of the low-energy electron point source (LEEPS) microscope is reformulated in matrix form to readily account for multiple scattering. An algorithm is developed for the storage of the structure matrix and an iterative method is used to solve the matrix equation for the structure factor. Examples of small and large clusters of atoms are given to compare single and multiple scattering. ...

Precise Comparison of Two-dimensional Dopant Profi les Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques

As the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) shrinks to nanoscale, the precise and reliable dopant profiling in shallow junctions has become important for device modeling and operation (Bertrand et al.,2004). Secondary ion mass spectrometry (SIMS) and spreading resistance profiling are widely used as practical characterization techniques to reveal one-dimensional ...

Ferroelectric electron holography.

Ferroelectrics are increasingly important as materials in semiconductor technology, e.g. for building non-volatile memory chips. For optimisation of the properties of such devices, there is an urgent need for methods, which analyse the ferroelectric properties at nanometer scale. Furthermore, the basic understanding of the interaction of ferroelectrics with electrons in the transmission electro...

Pulsed electron holography

Electron Holography: Recent Developments

With the ever increasing speed of modern computers, computing-power hungry applications as electron holography can become more interactive and user friendly and be available for live-time application. New phase unwrapping algorithms and improved reconstruction techniques are discussed together with new approaches to improve the signal/noise ratio in reconstructed phase and amplitude images. Whi...